The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2013

Filed:

Dec. 01, 2008
Applicants:

Lucie Rousseville, Waldolwisheim, FR;

Serge Bardy, Caen, FR;

Philippe Le Duc, Louvigny, FR;

David Desmortreux, May sur Orne, FR;

Inventors:

Lucie Rousseville, Waldolwisheim, FR;

Serge Bardy, Caen, FR;

Philippe Le Duc, Louvigny, FR;

David Desmortreux, May sur Orne, FR;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 27/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor device with a patterned pad metal layer and a patterned under-bump metallization layer being mutually electrically connected in a common contact area. The semiconductor device includes a first test structurefor determining a contact resistance between the patterned metallization layer and the patterned pad metal layer in the common contact areas. The first test structure includes a pad metal layer portionand a metallization layer portionbeing in electrical communication with the pad metal layer portionthrough the common contact area. The first test structurefurther includes connection areasthat are electrically connected with each other substantially via the common contact area. Upon application of a current between the connection areasa voltage drop occurs that is representative for a voltage drop over the common contact area


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