Through-substrate via and redistribution layer with metal paste

Abstract

A semiconductor device and a method for manufacturing such semiconductor device for use in a stacked configuration of the semiconductor device are disclosed. The semiconductor device includes a substrate including at least part of an electronic circuit provided at a first side thereof. The substrate includes a passivation layer and a substrate via that extends from the first side to a via depth such that it is reconfigurable into a through-substrate. The semiconductor device further includes a patterned masking layer on the first side of the substrate. The patterned masking layer includes a trench extending fully through the patterned masking layer. The trench has been filled with a redistribution conductor. The substrate via and the redistribution conductor include metal paste and together form one piece, such that there is no physical interface between the through-substrate via and the redistribution conductor. Thus, the parasitic resistance of this electrical connection is reduced.