The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8395230 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 12, 2013

Filed:

Jul. 07, 2009
Applicants:

Hiroki Hozumi, Kanagawa, JP;

Yuji Sasaki, Kanagawa, JP;

Shusaku Yanagawa, Kanagawa, JP;

Inventors:

Hiroki Hozumi, Kanagawa, JP;

Yuji Sasaki, Kanagawa, JP;

Shusaku Yanagawa, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/20 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a first semiconductor region of a first conductivity type disposed on the side of a first electrode; and a second semiconductor region having first pillar regions of the first conductivity type and second pillar regions of a second conductivity type, the first pillar regions and the second pillar regions being provided in paired state and alternately, in a device portion and a terminal portion surrounding the device portion, along a surface on the side of a second electrode disposed on the opposite side of the first semiconductor region from the first electrode. The semiconductor device further includes a lateral RESURF (reduced surface field) region of the second conductivity type disposed at a surface portion, on the opposite side from the first semiconductor region, of the second semiconductor region in the terminal portion.


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