The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Mar. 26, 2012
Masayasu Miyata, Nagano-ken, JP;
Masayasu Miyata, Nagano-ken, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor deviceincludes: a basemainly formed of a semiconductor material; a gate electrode; and a gate insulating filmprovided between the baseand the gate electrode. The gate insulating filmis formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating filmis provided in contact with the base, and contains hydrogen atoms. The gate insulating filmhas a region where A and B satisfy the relation: B/A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least apart of the gate insulating filmin the thickness direction thereof.