The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Sep. 26, 2008
Yasuhiro Takeda, Ogaki, JP;
Seiji Otake, Kumagaya, JP;
Shuichi Kikuchi, Oizumi-machi, JP;
SANYO Semiconductor Co., Ltd., Ora-gun, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
The invention provides a DMOS transistor in which a leakage current is decreased and the source-drain breakdown voltage of the transistor in the off state is enhanced when a body layer is formed by oblique ion implantation. After a photoresist layeris formed, using the photoresist layerand a gate electrodeas a mask, first ion implantation is performed toward a first corner portionCon the inside of the gate electrodein a first direction shown by an arrow A'. A first body layerA′ is formed by this first ion implantation. The first body layerA′ is formed so as to extend from the first corner portionCto under the gate electrode, and the P-type impurity concentration of the body layerA′ in the first corner portionCis higher than that of a conventional transistor.