The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Sep. 21, 2011
Haruhisa Yokoyama, Kyoto, JP;
Hiroshi Sakoh, Niigata, JP;
Kazuhiro Yamashita, Osaka, JP;
Mitsuo Yasuhira, Osaka, JP;
Yuichi Hirofuji, Osaka, JP;
Haruhisa Yokoyama, Kyoto, JP;
Hiroshi Sakoh, Niigata, JP;
Kazuhiro Yamashita, Osaka, JP;
Mitsuo Yasuhira, Osaka, JP;
Yuichi Hirofuji, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.