The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Feb. 02, 2012
Toru Koizumi, Yokohama, JP;
Shigetoshi Sugawa, Atsugi, JP;
Isamu Ueno, Hadano, JP;
Tetsunobu Kochi, Hiratsuka, JP;
Katsuhito Sakurai, Tokyo, JP;
Hiroki Hiyama, Atsugi, JP;
Toru Koizumi, Yokohama, JP;
Shigetoshi Sugawa, Atsugi, JP;
Isamu Ueno, Hadano, JP;
Tetsunobu Kochi, Hiratsuka, JP;
Katsuhito Sakurai, Tokyo, JP;
Hiroki Hiyama, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.