The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Mar. 10, 2005
Tae-yeong Seong, Gwangju-si, KR;
Kyoung-kook Kim, Gyeonggi-do, KR;
June-o Song, Gwangju-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Jung-inn Sohn, Gwangju-si, KR;
Tae-yeong Seong, Gwangju-si, KR;
Kyoung-kook Kim, Gyeonggi-do, KR;
June-o Song, Gwangju-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Jung-inn Sohn, Gwangju-si, KR;
Abstract
A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.