The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Oct. 28, 2009
Akihiko Murai, Hioki Kogoshima, JP;
Hiroshi Fukshima, Kadoma, JP;
Akihiko Murai, Hioki Kogoshima, JP;
Hiroshi Fukshima, Kadoma, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting elementin accordance with the present invention includes: a light-emitting layerhaving a laminated structure in which a p-type GaN filmand an n-type GaN filmare included; a conductive hexagonal pyramidal baseformed from ZnO and mounting with the light-emitting layer on a bottom surface; an anodejoined to the bottom surfaceof the baseat a position apart from the light-emitting layer; and a cathodemounted on the light-emitting layer. In the semiconductor light-emitting element, the p-type GaN filmis joined to the bottom surfaceof the base, and the cathodeis joined to an N-polar plane of the n-type GaN film, said N-polar plane of the n-type GaN filmbeing an opposite side to the p-type GaN film. In the semiconductor light-emitting element, the N-polar plane of the n-type GaN filmhas a fine peak-valley structureoutside a portion joined to the cathode