The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jul. 06, 2009
Applicant:
Doyeol Ahn, Seoul, KR;
Inventor:
Doyeol Ahn, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.