The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Aug. 04, 2009
Minoru Doshida, Yokohama, JP;
Mitsuhiro Nagashima, Suginama, JP;
Michiya Kibe, Sagamihara, JP;
Hiroyasu Yamashita, Kawasaki, JP;
Hironori Nishino, Kawasaki, JP;
Yusuke Matsukura, Kawasaki, JP;
Yasuhito Uchiyama, Kawasaki, JP;
Minoru Doshida, Yokohama, JP;
Mitsuhiro Nagashima, Suginama, JP;
Michiya Kibe, Sagamihara, JP;
Hiroyasu Yamashita, Kawasaki, JP;
Hironori Nishino, Kawasaki, JP;
Yusuke Matsukura, Kawasaki, JP;
Yasuhito Uchiyama, Kawasaki, JP;
Technical Research & Development Institute Ministry of Defense of Japan, Tokyo, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer, and an upper electrode layerformed over the infrared absorption layer. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.