The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2013

Filed:

Jan. 07, 2010
Applicants:

Juan Valdivia, Fremont, CA (US);

Shibu Gangadharan, Boise, CA (US);

Dave March, Eagle, ID (US);

Charles Potter, Eagle, ID (US);

Inventors:

Juan Valdivia, Fremont, CA (US);

Shibu Gangadharan, Boise, CA (US);

Dave March, Eagle, ID (US);

Charles Potter, Eagle, ID (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for adjusting the geometry of photomask patterns is provided. Such adjusted pattern can be employed to achieve pattern doubling in subsequent layers. A patterned photoresist mask is provided over an underlayer. A polymer layer is placed over the mask. The mask is selectively trimmed to generate individual mask features having an increased aspect ratio. Subsequent pattern layers can be formed on the trimmed mask pattern to generate a hard mask having increased pattern density. The hard mask is selectively etched and the material of the trimmed mask pattern is removed. The underlayer is then etched to achieve pattern transfer from the hard mask to the underlayer to achieve a final double density pattern.


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