The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Nov. 03, 2008
Gerardo A. Delgadino, Santa Clara, CA (US);
Robert C. Hefty, Fremont, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Robert C. Hefty, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for controlling critical dimension (CD) of etch features in an etch layer disposed below a functionalized organic mask layer disposed below an intermediate mask layer, disposed below a patterned photoresist mask, which forms a stack is provided. The intermediate mask layer is opened by selectively etching the intermediate mask layer with respect to the patterned photoresist mask. The functionalized organic mask layer is opened. The functionalized organic mask layer opening comprises flowing an open gas comprising COS, forming a plasma, and stopping the flowing of the open gas. The etch layer is etched.