The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jul. 12, 2010
Koji Arita, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Atsushi Himeno, Osaka, JP;
Yoshio Kawashima, Osaka, JP;
Kenji Tominaga, Kyoto, JP;
Koji Arita, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Atsushi Himeno, Osaka, JP;
Yoshio Kawashima, Osaka, JP;
Kenji Tominaga, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A resistance variable element () used in a through-hole cross-point structure memory device, according to the present invention, and a resistance variable memory device including the resistance variable element, includes a substrate () and an interlayer insulating layer () formed on the substrate, and have a configuration in which a through-hole () is formed to penetrate the interlayer insulating layer, a first resistance variable layer () comprising transition metal oxide is formed outside the through-hole, a second resistance variable layer () comprising transition metal oxide is formed inside the through-hole, the first resistance variable layer is different in resistivity from the second resistance variable layer, and the first resistance variable layer and the second resistance variable layer are in contact with each other only in an opening () of the through-hole which is closer to the substrate.