The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2013

Filed:

Jun. 13, 2008
Applicants:

Sadayoshi Hotta, Osaka, JP;

Jonathan Halls, Cambridge, GB;

Gregory Whiting, Menlo Park, CA (US);

Inventors:

Sadayoshi Hotta, Osaka, JP;

Jonathan Halls, Cambridge, GB;

Gregory Whiting, Menlo Park, CA (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode; forming a thin self-assembled layer of material on the source and drain electrodes, the thin self-assembled layer of material comprising a dopant moiety for chemically doping an organic semi-conductive material by accepting or donating charge and a separate attachment moiety bonded to the dopant moiety and selectively bonded to the source and drain electrodes; and depositing a solution comprising a solvent and an organic semi-conductive material in a channel region between the source and drain electrode.


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