The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2013

Filed:

Jan. 21, 2009
Applicants:

Ki-hyun Kim, Yongin-si, KR;

Ki-vin Im, Seongnam-Si, KR;

Hoon-sang Choi, Seoul, KR;

Moon-hyeong Han, Seoul, KR;

Inventors:

Ki-Hyun Kim, Yongin-si, KR;

Ki-Vin Im, Seongnam-Si, KR;

Hoon-Sang Choi, Seoul, KR;

Moon-Hyeong Han, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/06 (2006.01); C23C 16/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.


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