The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jan. 04, 2012
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Masaki Ueno, Itami, JP;
Fumitake Nakanishi, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Masaki Ueno, Itami, JP;
Fumitake Nakanishi, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A primary surfaceof a supporting baseof a light-emitting diodetilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stackincludes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle 'A' between the (0001) plane (the reference plane Sshown in FIG.) of the GaN supporting base and the (0001) plane of a buffer layeris 0.05 degree or more and 2 degrees or less. The tilt angle 'B' between the (0001) plane of the GaN supporting base (the reference plane Sshown in FIG.) and the (0001) plane of a well layeris 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.