The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jun. 24, 2011
Zhichao LU, Leuven, BE;
Nadine Collaert, Blanden, BE;
Marc Aoulaiche, Leuven, BE;
Malgorzata Jurczak, Leuven, BE;
Zhichao Lu, Leuven, BE;
Nadine Collaert, Blanden, BE;
Marc Aoulaiche, Leuven, BE;
Malgorzata Jurczak, Leuven, BE;
IMEC, Leuven, BE;
Abstract
Multi-gate metal-oxide-semiconductor (MOS) transistors and methods of operating such multi-gate MOS transistors are disclosed. In one embodiment, the multi-gate MOS transistor comprises a first gate associated with a first body factor and comprising a first gate electrode for applying a first gate voltage, and a second gate associated with a second body factor greater than or equal to the first body factor and comprising a second gate electrode for applying a second gate voltage. The multi-gate MOS transistor further comprises a body of semiconductor material between the first dielectric layer and the second dielectric layer, where the semiconductor body comprises a first channel region located close to the first dielectric layer and a second channel region located close to the second dielectric layer. The multi-gate MOS transistor still further comprises a source region and a drain region each having a conductivity type different from a conductivity type of the body.