The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Dec. 22, 2009
Tsuyoshi Takahashi, Tsukuba, JP;
Shigeo Furuta, Tsukuba, JP;
Yuichiro Masuda, Tsukuba, JP;
Masatoshi Ono, Tsukuba, JP;
Tsuyoshi Takahashi, Tsukuba, JP;
Shigeo Furuta, Tsukuba, JP;
Yuichiro Masuda, Tsukuba, JP;
Masatoshi Ono, Tsukuba, JP;
Funai Electric Advanced Applied Technology Research Institute Inc., Daito-shi, JP;
Funai Electric Co., Ltd., Daito-shi, JP;
Abstract
Disclosed is a memory cell array including: word lines and first and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and a switching element formed inside a contact hole, the switching element includes first and second conductive layers and a gap in which a resistance value is changed by applying a predetermined voltage, each word line is connected to a gate electrode, each first bit line is connected to a second electrode, each second bit line is connected to the second conductive layer, and data is written by supplying a write voltage to the first bit line connected to the selected memory cell and specifying the word line connected to the memory cell, and data is read by supplying a read voltage to the first bit lines connected to the memory cell and specifying the word line connected to the memory cells.