The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Aug. 21, 2009
Shur-fen Liu, Hsinchu County, TW;
Meng-huei Chen, Kaohsiung County, TW;
Bih-yih Chen, Hsinchu County, TW;
Yun-tien Chen, Hsinchu, TW;
Shur-Fen Liu, Hsinchu County, TW;
Meng-Huei Chen, Kaohsiung County, TW;
Bih-Yih Chen, Hsinchu County, TW;
Yun-Tien Chen, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
The disclosed is a capacitor substrate structure to reduce the high leakage current and low insulation resistance issue of organic/inorganic hybrid materials with ultra-high dielectric constant. The insulation layer, disposed between two conductive layers, includes multi-layered dielectric layers. At least one of the dielectric layers has high dielectric constant, including high dielectric constant ceramic powder and conductive powder evenly dispersed in organic resin. The other dielectric layers can be organic resin, or further include high dielectric constant ceramic powder dispersed in the organic resin. The substrate has an insulation resistance of about 50KΩ and leakage current of below 100 μAmp under operational voltage.