The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Sep. 23, 2011
Yoon Ho Song, Daejeon, KR;
Dae Jun Kim, Daejeon, KR;
Jin Woo Jeong, Daegu, KR;
Jin Ho Lee, Daejeon, KE;
Kwang Yong Kang, Daejeon, KR;
Yoon Ho Song, Daejeon, KR;
Dae Jun Kim, Daejeon, KR;
Jin Woo Jeong, Daegu, KR;
Jin Ho Lee, Daejeon, KE;
Kwang Yong Kang, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.