The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8390423 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 05, 2013

Filed:

May. 19, 2009
Applicants:

Arjang Fartash, Corvallis, OR (US);

Peter Mardilovich, Corvallis, OR (US);

Inventors:

Arjang Fartash, Corvallis, OR (US);

Peter Mardilovich, Corvallis, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 1/012 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nanoflat resistor includes a first aluminum electrode (), a second aluminum electrode (); andnanoporous alumina () separating the first and second aluminum electrodes (). A substantially planar resistor layer () overlies the first and second aluminum electrodes () and nanoporous alumina (). Electrical current passes from the first aluminum electrode (), through a portion of the planar resistor layer () overlying the nanoporous alumina () and into the second aluminum electrode (). A method for constructing a nanoflat resistor () is also provided.


Find Patent Forward Citations

Fartash, Arjang. (2013). Nanoflat resistor (U.S. Patent No. 8390423). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8390423

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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