The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
May. 18, 2011
Yoshihiro Oka, Kanagawa, JP;
Kinya Goto, Kanagawa, JP;
Yoshihiro Oka, Kanagawa, JP;
Kinya Goto, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
The reliability of a porous Low-k film is improved. The mean diameter of first pores and second pores in an interlayer insulation film of a second fine layer including a porous Low-k film is set at 1.0 nm or more and less than 1.45 nm. This prevents the formation of a modified layer over the surface of the interlayer insulation film by process damages. Further, the formation of the moisture-containing modified layer is inhibited to prevent oxidation of a barrier film and a main conductor film forming respective wirings. This prevents deterioration of breakdown voltage between respective wirings. This prevents deterioration of the EM lifetime of wirings formed adjacent to the interlayer insulation film and the inter-wiring TDDB lifetime of the wirings.