The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jan. 17, 2007
Applicants:
Takuya Hamaguchi, Tokyo, JP;
Hideki Haruguchi, Tokyo, JP;
Tetsujiro Tsunoda, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
Abstract
An IGBT comprises trenches arranged in strips, first emitter diffusion layers formed so as to extend in a direction intersecting the trenches, and contact regions formed to have a rectangular shape. The portions of the contact regions on the first emitter diffusion layers have a smaller width than the other portions, the width extending in the direction intersecting the trenches. This configuration allows for an increase in the emitter ballast resistance of the emitter diffusion layers, resulting in enhanced resistance to electrical breakdown due to short circuit.