The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Nov. 02, 2009
Derek Frederick Bowers, Los Altos Hills, CA (US);
Andrew David Bain, Limerick, IE;
Paul Malachy Daly, Limerick, IE;
Anne Maria Deignan, Limerick, IE;
Michael Thomas Dunbar, San Jose, CA (US);
Patrick Martin Mcguinness, Limerick, IE;
Bernard Patrick Stenson, Limerick, IE;
William Allan Lane, Cork, IE;
Derek Frederick Bowers, Los Altos Hills, CA (US);
Andrew David Bain, Limerick, IE;
Paul Malachy Daly, Limerick, IE;
Anne Maria Deignan, Limerick, IE;
Michael Thomas Dunbar, San Jose, CA (US);
Patrick Martin McGuinness, Limerick, IE;
Bernard Patrick Stenson, Limerick, IE;
William Allan Lane, Cork, IE;
Analog Devices, Inc., Norwood, MA (US);
Abstract
A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.