The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jan. 23, 2009
Hidekazu Umeda, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Hidekazu Umeda, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes an undoped GaN layer () formed on a substrate (), an undoped AlGaN layer () formed on the undoped GaN layer () and having a band gap energy larger than that of the undoped GaN layer (), a p-type AlGaN layer () and a high-concentration p-type GaN layer () formed on the undoped AlGaN layer (), and an n-type AlGaN layer () formed on the high-concentration p-type GaN layer (). A gate electrode () which makes ohmic contact with the high-concentration p-type GaN layer () is formed on the high-concentration p-type GaN layer () in a region thereof exposed through an opening () formed in the n-type AlGaN layer ().