The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Sep. 02, 2010
Toru Gotoda, Yokohama, JP;
Takahiro Sato, Kawasaki, JP;
Toshiyuki Oka, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Kotaro Zaima, Tokyo, JP;
Toru Gotoda, Yokohama, JP;
Takahiro Sato, Kawasaki, JP;
Toshiyuki Oka, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Kotaro Zaima, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.