The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Aug. 25, 2008
Applicants:
Adrian Stefan Avramescu, Regensburg, DE;
Hans-juergen Lugauer, Sinzing, DE;
Matthias Peter, Alteglofsheim, DE;
Stephan Miller, Pentling, DE;
Inventors:
Adrian Stefan Avramescu, Regensburg, DE;
Hans-Juergen Lugauer, Sinzing, DE;
Matthias Peter, Alteglofsheim, DE;
Stephan Miller, Pentling, DE;
Assignee:
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/16 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 29/06 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.