The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8389999 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 05, 2013

Filed:

Sep. 28, 2010
Applicants:

Anthony Buonassisi, Cambridge, MA (US);

Mariana Bertoni, Somerville, MA (US);

Ali Argon, Belmont, MA (US);

Sergio Castellanos, Sonora, MX;

Alexandria Fecych, Somerville, MA (US);

Douglas Powell, Highland Heights, OH (US);

Michelle Vogl, Dekalb, IL (US);

Inventors:

Anthony Buonassisi, Cambridge, MA (US);

Mariana Bertoni, Somerville, MA (US);

Ali Argon, Belmont, MA (US);

Sergio Castellanos, Sonora, MX;

Alexandria Fecych, Somerville, MA (US);

Douglas Powell, Highland Heights, OH (US);

Michelle Vogl, Dekalb, IL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.


Find Patent Forward Citations

Buonassisi, Anthony. (2013). Method to reduce dislocation density in silicon using stress (U.S. Patent No. 8389999). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8389999

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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