The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Apr. 11, 2012
Young-wook Lee, Suwon-si, KR;
Hong-suk Yoo, Anyang-si, KR;
Jean-ho Song, Seoul, KR;
Jae-hyoung Youn, Seoul, KR;
Woo-geun Lee, Yongin-si, KR;
Ki-won Kim, Suwon-si, KR;
Jong-in Kim, Suwon-si, KR;
Young-Wook Lee, Suwon-si, KR;
Hong-Suk Yoo, Anyang-si, KR;
Jean-Ho Song, Seoul, KR;
Jae-Hyoung Youn, Seoul, KR;
Woo-Geun Lee, Yongin-si, KR;
Ki-Won Kim, Suwon-si, KR;
Jong-In Kim, Suwon-si, KR;
Samsung Display Co., Ltd., , KR;
Abstract
A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.