The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Apr. 30, 2010
Applicants:

Hidetoshi Nozaki, Sunnyvale, CA (US);

Fei Wu, San Jose, CA (US);

Inventors:

Hidetoshi Nozaki, Sunnyvale, CA (US);

Fei Wu, San Jose, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01J 5/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

An image sensor in accordance with embodiments disclosed herein includes an array of imaging pixels, an insulator layer, and a plurality of metal reflectors. The array of imaging pixels are disposed within a semiconductor layer, where each imaging pixel in the array of imaging pixels includes a photosensitive element configured to receive light from a backside of the image sensor. The insulator layer is disposed on a frontside of the semiconductor layer and the plurality of metal reflectors are disposed within the insulator layer to reflect the light to a respective photosensitive element. A width of each of the plurality of metal reflectors is equal to a width of a metal reflector at the center of the array multiplied by a scaling factor, where the scaling factor is dependent on a distance of the metal reflector from the center of the array.


Find Patent Forward Citations

Loading…