The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jun. 23, 2010
Young-lim Park, Hwaseong-si, KR;
Jinil Lee, Seongnam-si, KR;
Changsu Kim, Hwaseong-si, KR;
Sugwoo Jung, Hwaseong-si, KR;
Young-Lim Park, Hwaseong-si, KR;
Jinil Lee, Seongnam-si, KR;
Changsu Kim, Hwaseong-si, KR;
Sugwoo Jung, Hwaseong-si, KR;
Abstract
Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.