The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Feb. 09, 2009
Jan Sonsky, Leuven, BE;
Radu Surdeanu, Roosbeek, BE;
Jan Sonsky, Leuven, BE;
Radu Surdeanu, Roosbeek, BE;
NXP B.V., Eindhoven, NL;
Abstract
The present invention relates to a FinFET with separate gates and to a method for fabricating the same. A dielectric gate-separation layer between first and second gate electrodes has an extension in a direction pointing from a first to a second gate layer that is smaller than a lateral extension of the fin between its opposite lateral faces. This structure corresponds with a processing method that starts from a covered basic FinFET structure with a continuous first gate layer, and proceeds to remove parts of the first gate layer and of a first gate-isolation layer through a contact opening to the gate layer. Subsequently, a replacement gate-isolation layer that at the same time forms the gate separation layer fabricated, followed by filling the tunnel with a replacement gate layer and a metal filling.