The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Apr. 30, 2009
Hans S. Cho, Palo Alto, CA (US);
Theodore I. Kamins, Palo Alto, CA (US);
Nathaniel J. Quitoriano, Pacifica, CA (US);
Hans S. Cho, Palo Alto, CA (US);
Theodore I. Kamins, Palo Alto, CA (US);
Nathaniel J. Quitoriano, Pacifica, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A photonic device () and method () of making the photonic device () employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (). The method () includes growing () the polycrystalline layer () on a substrate (). The polycrystalline layer includes a transition region () of variously oriented grains and a region () of columnar grain boundaries () adjacent to the transition region. The method further includes preferentially etching () the columnar grain boundaries to provide tapered structures () of the semiconductor material that are continuous () with respective aligned grains () of the transition region. The tapered structures are predominantly single crystal. The method further includes forming () a conformal semiconductor junction () on the tapered structures and providing () first and second electrodes. The first electrode () is adjacent to the transition region and the second electrode () is adjacent to a surface layer of the conformal semiconductor junction.