The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Jan. 05, 2011
Seok-jun Won, Seoul, KR;
Jung-min Park, Ansan-si, KR;
Seok-Jun Won, Seoul, KR;
Jung-Min Park, Ansan-si, KR;
Abstract
In a semiconductor integrated circuit device and a method of formation thereof, a semiconductor device comprises: a semiconductor substrate; an insulator at a top portion of the substrate, defining an insulator region; a conductive layer pattern on the substrate, the conductive layer pattern being patterned from a common conductive layer, the conductive layer pattern including a first pattern portion on the insulator in the insulator region and a second pattern portion on the substrate in an active region of the substrate, wherein the second pattern portion comprises a gate of a transistor in the active region; and a capacitor on the insulator in the insulator region, the capacitor including: a lower electrode on the first pattern portion of the conductive layer pattern, a dielectric layer pattern on the lower electrode, and an upper electrode on the dielectric layer pattern.