The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Feb. 26, 2010
Jisim Jung, Inchon, KR;
Youngsoo Park, Yongin-si, KR;
Sangyoon Lee, Seoul, KR;
Changjung Kim, Yongin-si, KR;
Taesang Kim, Seoul, KR;
Jangyeon Kwon, Seongnam-si, KR;
Kyungseok Son, Seoul, KR;
Jisim Jung, Inchon, KR;
Youngsoo Park, Yongin-si, KR;
Sangyoon Lee, Seoul, KR;
Changjung Kim, Yongin-si, KR;
Taesang Kim, Seoul, KR;
Jangyeon Kwon, Seongnam-si, KR;
Kyungseok Son, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.