The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Oct. 03, 2006
John R. Martin, Foxborough, MA (US);
Thomas D. Chen, Cambridge, MA (US);
Jinbo Kuang, Acton, MA (US);
Thomas Kieran Nunan, Carlisle, MA (US);
Xin Zhang, Acton, MA (US);
John R. Martin, Foxborough, MA (US);
Thomas D. Chen, Cambridge, MA (US);
Jinbo Kuang, Acton, MA (US);
Thomas Kieran Nunan, Carlisle, MA (US);
Xin Zhang, Acton, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A method of producing a MEMS device provides a MEMS apparatus having released structure. The MEMS apparatus is formed at least in part from an SOI wafer having a first layer, a second layer spaced from the first layer, and an insulator layer between the first layer and second layer. The first layer has a top surface, while the second layer has a bottom surface facing the top surface. After providing the MEMS apparatus, the method increases the roughness of at least the top surface of the first layer or the bottom surface of the second layer.