The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Feb. 07, 2012
Yusuke Yoshizumi, Itami, JP;
Shimpei Takagi, Osaka, JP;
Takatoshi Ikegami, Itami, JP;
Masaki Ueno, Itami, JP;
Koji Katayama, Osaka, JP;
Yusuke Yoshizumi, Itami, JP;
Shimpei Takagi, Osaka, JP;
Takatoshi Ikegami, Itami, JP;
Masaki Ueno, Itami, JP;
Koji Katayama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.