The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Jul. 26, 2012
Applicants:

Kung-hwa Wei, HsinChu, TW;

Jeng-tzong Sheu, HsinChu, TW;

Chen-chia Chen, Changhua County, TW;

Mao-yuan Chiu, Hualien County, TW;

Inventors:

Kung-Hwa Wei, HsinChu, TW;

Jeng-Tzong Sheu, HsinChu, TW;

Chen-Chia Chen, Changhua County, TW;

Mao-Yuan Chiu, Hualien County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.


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