The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2013

Filed:

Dec. 19, 2008
Applicants:

Kazuaki Sawada, Toyohashi, JP;

Junichi Matsuo, Toyohashi, JP;

Hirokazu Nakazawa, Toyoshashi, JP;

Inventors:

Kazuaki Sawada, Toyohashi, JP;

Junichi Matsuo, Toyohashi, JP;

Hirokazu Nakazawa, Toyoshashi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A combined detector capable of simultaneously detecting both a value indicating a physical/chemical phenomenon such as a pH value and the intensity of an energy beam such as light. The combined detector comprises a physical/chemical phenomenon detecting system () and an energy beam detecting system. The physical/chemical phenomenon detecting system () has a sensing section () whose potential varies with a physical/chemical phenomenon, a charge supply section () for supplying first charge to the sensing section, a charge supply control section () provided between the sensing section () and the charge supply section (), a first charge storage section () for storing the first charge transferred from the sensing section (), and a charge transfer control section () provided between the sensing section () and the first charge storage section (). The sensing section () includes a semiconductor charge generating portion () for generating the first charge and second charge when receiving an energy beam such as light. The energy beam detecting system has the semiconductor charge generating portion () and a second charge storage section () adapted to store the second charge generated by the semiconductor charge generating portion () and having an opposite potential to the first charge storage section () with respect to the sensing section ().


Find Patent Forward Citations

Sawada, Kazuaki. (2013). Combined detector (U.S. Patent No. 8388893). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8388893

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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