The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jan. 07, 2010
Junji Yoshida, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Hidehiro Taniguchi, Tokyo, JP;
Satoshi Irino, Tokyo, JP;
Hirokazu Itoh, Tokyo, JP;
Harunobu Ikeda, Tokyo, JP;
Masako Kobayakawa, Tokyo, JP;
Akihiko Kasukawa, Tokyo, JP;
Junji Yoshida, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Hidehiro Taniguchi, Tokyo, JP;
Satoshi Irino, Tokyo, JP;
Hirokazu Itoh, Tokyo, JP;
Harunobu Ikeda, Tokyo, JP;
Masako Kobayakawa, Tokyo, JP;
Akihiko Kasukawa, Tokyo, JP;
Furukawa Electric Co., Ltd, Tokyo, JP;
Abstract
A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.