The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Dec. 03, 2010
Gilles Gaudin, Le Sappey, FR;
Ioan Mihai Miron, Mataro, ES;
Pietro Gambardella, Sant Cugat Des Valles, ES;
Alain Schuhl, Grenoble, FR;
Gilles Gaudin, Le Sappey, FR;
Ioan Mihai Miron, Mataro, ES;
Pietro Gambardella, Sant Cugat Des Valles, ES;
Alain Schuhl, Grenoble, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Commissariat a l'Energie Atomique Et Aux Energies Alternatives, Paris, FR;
Universite Joseph Fourier, Grenoble Cedex, FR;
Institut Catala de Nanotechnologia (ICN), Bellaterra, ES;
Institucio Catalana de Recerca I Estudis Avancats (ICREA), Barcelona, ES;
Abstract
The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle α lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic field in the central layer, the current being applied either in a first direction or in a second direction opposite to the first, in order to orient the magnetization direction in a first magnetization direction or in a second magnetization direction opposite to the first.