The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Mar. 04, 2008
Igor Getman, Lörrach, DE;
Anh Tuan Tham, Berlin, DE;
Dieter Stolze, Potsdam, DE;
Endress + Hauser GmbH + Co. KG, Hauptstrasse, Maulburg, DE;
Abstract
A piezoresistive pressure sensor is especially suitable for measuring smaller pressures and has a small linearity error. The pressure sensor is manufactured from a BESOI wafer having first and second silicon layers and an oxide layer arranged therebetween. The pressure sensor includes, formed from the first silicon layer of the BESOI wafer, an active layer, in which piezoresistive elements are doped, and, formed from the second silicon layer of the BESOI wafer, a membrane carrier, which externally surrounds a cavity in the second silicon layer, via which a membrane forming region of the active layer and an oxide layer associated therewith are exposed, wherein, in an outer edge of the region of the oxide layer exposed by the cavity, a groove is provided surrounding the region.