The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Jul. 07, 2011
Tsuyoshi Yamamoto, Kariya, JP;
Masakiyo Sumitomo, Okazaki, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Nozomu Akagi, Nukata, JP;
Yuma Kagata, Kariya, JP;
Tsuyoshi Yamamoto, Kariya, JP;
Masakiyo Sumitomo, Okazaki, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Nozomu Akagi, Nukata, JP;
Yuma Kagata, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a substrate; multiple first and second conductive type regions on the substrate for providing a super junction structure; a channel layer on the super junction structure; a first conductive type layer in the channel layer; a contact second conductive type region in the channel layer; a gate electrode on the channel layer via a gate insulation film; a surface electrode on the channel layer; a backside electrode on the substrate opposite to the super junction structure; and an embedded second conductive type region. The embedded second conductive type region is disposed in a corresponding second conductive type region, protrudes into the channel layer, and contacts the contact second conductive type region. The embedded second conductive type region has an impurity concentration higher than the channel layer, and has a maximum impurity concentration at a position in the corresponding second conductive type region.