The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Oct. 13, 2009
Katsuyuki Torii, Niiza, JP;
Katsuyuki Torii, Niiza, JP;
Sanken Electric Co., Ltd., Saitama, JP;
Abstract
An IGBT having a good balance between high switching speed and low on-resistance. Specifically disclosed is an IGBTin which a defect layeris formed in an n layerin an active regionand formed in a p-type substratein a non-active region. In other words, the defect layerin the active regionis at a shallower position than the defect layerin the non-active regionwhen viewed from the surface. Due to this configuration, the switching speed is increased by reducing the amount of holes injected in the non-active regionin the IGBT. Meanwhile, the reduction of hole injection amount in the active regionis smaller than that in the non-active region, and thus increase in the on-resistance is suppressed at that time.