The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
May. 14, 2009
Jaechul Park, Seoul, KR;
Keewon Kwon, Seongnam-si, KR;
Jaechul Park, Seoul, KR;
Keewon Kwon, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A transistor having a self-align top gate structure and methods of manufacturing the same are provided. The transistor includes an oxide semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region. The transistor further includes a gate insulating layer and a gate electrode, which are sequentially stacked on the channel region. Semiconductor devices including at least one transistor and methods of manufacturing the same are also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile