The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2013

Filed:

Nov. 06, 2008
Applicants:

Takumi Mikawa, Shiga, JP;

Kenji Tominaga, Kyoto, JP;

Kazuhiko Shimakawa, Osaka, JP;

Ryotaro Azuma, Osaka, JP;

Inventors:

Takumi Mikawa, Shiga, JP;

Kenji Tominaga, Kyoto, JP;

Kazuhiko Shimakawa, Osaka, JP;

Ryotaro Azuma, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/26 (2006.01); H01L 29/8605 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device of the present invention includes a substrate (), first wires (), first resistance variable elements () and lower electrodes () of first diode elements which are filled in first through-holes (), respectively, second wires () which cross the first wiresperpendicularly to the first wires, respectively, and each of which includes a semiconductor layer () of a first diode elements, a conductive layer () and a semiconductor layer () of a second diode elements which are stacked together in this order, second resistance variable elements () and upper electrodes () of second diode elements which are filled into second through holes (), respectively, and third wires (), and the conductive layer () of each second wires () also serves as the upper electrode of the first diode elements () and the lower electrode of the second diode elements ().


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