The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Mar. 22, 2011
Applicant:
Takaki Kurita, Yokohama, JP;
Inventor:
Takaki Kurita, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacturing method includes forming a transistor over a semiconductor substrate; forming a first silicon nitride film covering the transistor over the semiconductor substrate; supplying a NHF radical to the first silicon nitride film; making thermal processing on the first silicon nitride film after the supplying the NHF radical; and forming a second silicon nitride film over the first silicon nitride film after the thermal processing.