The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2013

Filed:

Jan. 21, 2011
Applicants:

Joumana El Rifai, Cairo, EG;

Ann Witvrouw, Herent, BE;

Ahmed Abdel Aziz, Cairo, EG;

Sherif Sedky, Sheikh Zaid, EG;

Inventors:

Joumana El Rifai, Cairo, EG;

Ann Witvrouw, Herent, BE;

Ahmed Abdel Aziz, Cairo, EG;

Sherif Sedky, Sheikh Zaid, EG;

Assignees:

IMEC, Leuven, BE;

American University Cairo, Cairo, EG;

Katholieke Universiteit, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence.


Find Patent Forward Citations

Loading…