The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Oct. 23, 2008
Yasunori Yokoyama, Ichihara, JP;
Takehiko Okabe, Ichihara, JP;
Hisayuki Miki, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrateusing a sputtering method. The apparatus includes: a chamber; a targetthat is arranged in the chamberand includes a group-III element; a first plasma generating meansthat generates a first plasma for sputtering the targetto supply raw material particles to the substrate; a second plasma generating meansthat generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating meansand the second plasma generating meansto alternately generate the first plasma and the second plasma in the chamber